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As-implanted lattice site of dopants in semiconductors

Detalles Bibliográficos
Autores principales:	Hofsäss, H C, Linder, G, Winter, S, Besold, B, Recknagel, E, Weyer, G, Petersen, J W
Lenguaje:	eng
Publicado:	1986
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1183 http://cds.cern.ch/record/264811

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