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Advancing silicon carbide electronics technology I
The rapidly advancing Silicon Carbide technology has demonstrated a great potential in high-power low-loss semiconductor electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for development of high temperature electronics and semiconductor devices ope...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
Materials Research Forum
2018
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| Acceso en línea: | http://cds.cern.ch/record/2648172 |