Cargando…
Indium-defects complexes in silicon studied by perturbed angular correlation spectroscopy
Autores principales: | Wichert, T, Deicher, M, Grübel, G, Keller, R, Schulz, N, Skudlik, H |
---|---|
Lenguaje: | eng |
Publicado: |
1989
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/BF00617764 http://cds.cern.ch/record/264967 |
Ejemplares similares
-
Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy
por: Pfeiffer, Wolfgang, et al.
Publicado: (1991) -
Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon
por: Swanson, M L, et al.
Publicado: (1986) -
Stability of acceptor-hydrogen complexes in semiconductors
por: Skudlik, H, et al.
Publicado: (1990) -
Investigation of hydrogen in semiconductors by nuclear techniques
por: Deicher, M, et al.
Publicado: (1991) -
Combined PAC and electron channeling studies of He-defect interaction in Cu between 300 and 900 K
por: Hofsäss, H C, et al.
Publicado: (1987)