Lattice location of ion implanted $^{8}$Li in Si studied by alpha emission channeling

Detalles Bibliográficos
Autores principales: Wahl, U, Hofsäss, H C, Jahn, S G, Winter, S, Recknagel, E
Lenguaje:eng
Publicado: 1992
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/0168-583X(92)95469-8
http://cds.cern.ch/record/265007

Internet

https://dx.doi.org/10.1016/0168-583X(92)95469-8
http://cds.cern.ch/record/265007

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