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Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In...
| Autores principales: | , , , , , , , , , |
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| Publicado: |
2019
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| Acceso en línea: | https://dx.doi.org/10.1063/1.5097032 http://cds.cern.ch/record/2678030 |