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Lattice location study of low-fluence ion-implanted 124In in 3C-SiC

We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In...

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Autores principales: Costa, A. R. G., Wahl, U., Correia, J. G., David-Bosne, E., Augustyns, V., Lima, T. A. L., Silva, D. J., da Silva, M. R., Bharuth-Ram, K., Pereira, L. M. C.
Publicado: 2019
Acceso en línea:https://dx.doi.org/10.1063/1.5097032
http://cds.cern.ch/record/2678030
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author Costa, A. R. G.
Wahl, U.
Correia, J. G.
David-Bosne, E.
Augustyns, V.
Lima, T. A. L.
Silva, D. J.
da Silva, M. R.
Bharuth-Ram, K.
Pereira, L. M. C.
author_facet Costa, A. R. G.
Wahl, U.
Correia, J. G.
David-Bosne, E.
Augustyns, V.
Lima, T. A. L.
Silva, D. J.
da Silva, M. R.
Bharuth-Ram, K.
Pereira, L. M. C.
author_sort Costa, A. R. G.
collection CERN
description We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In atoms were found slightly displaced (0.12–0.20 Å) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 °C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.
id cern-2678030
institution Organización Europea para la Investigación Nuclear
publishDate 2019
record_format invenio
spelling cern-26780302022-01-14T15:22:23Zdoi:10.1063/1.5097032http://cds.cern.ch/record/2678030Costa, A. R. G.Wahl, U.Correia, J. G.David-Bosne, E.Augustyns, V.Lima, T. A. L.Silva, D. J.da Silva, M. R.Bharuth-Ram, K.Pereira, L. M. C.Lattice location study of low-fluence ion-implanted 124In in 3C-SiCWe report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In atoms were found slightly displaced (0.12–0.20 Å) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 °C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.oai:cds.cern.ch:26780302019
spellingShingle Costa, A. R. G.
Wahl, U.
Correia, J. G.
David-Bosne, E.
Augustyns, V.
Lima, T. A. L.
Silva, D. J.
da Silva, M. R.
Bharuth-Ram, K.
Pereira, L. M. C.
Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title_full Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title_fullStr Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title_full_unstemmed Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title_short Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
title_sort lattice location study of low-fluence ion-implanted 124in in 3c-sic
url https://dx.doi.org/10.1063/1.5097032
http://cds.cern.ch/record/2678030
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