Cargando…

Lattice location study of low-fluence ion-implanted 124In in 3C-SiC

We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In...

Descripción completa

Detalles Bibliográficos
Autores principales:	Costa, A. R. G., Wahl, U., Correia, J. G., David-Bosne, E., Augustyns, V., Lima, T. A. L., Silva, D. J., da Silva, M. R., Bharuth-Ram, K., Pereira, L. M. C.
Publicado:	2019
Acceso en línea:	https://dx.doi.org/10.1063/1.5097032 http://cds.cern.ch/record/2678030

Ejemplares similares

Lattice location of implanted transition metals in 3C–SiC
por: Granadeiro Costa, Angelo Rafael, et al.
Publicado: (2017)

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC
por: Costa, A R G, et al.
Publicado: (2017)

Emission channeling with short-lived isotopes: lattice location of impurities in semiconductors and oxides
por: Pereira, L M C, et al.
Publicado: (2013)

Lattice location of Fe in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Emission channeling lattice location experiments with short-lived isotopes
por: Wahl, Ulrich, et al.
Publicado: (2014)

Lattice location of implanted Ag in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Alpha emission channeling lattice location experiments of $^{8}$B
por: Wahl, U, et al.
Publicado: (2010)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted Cu in highly doped Si
por: Wahl, U, et al.
Publicado: (2003)

Emission channeling lattice location experiments with short-lived isotopes
por: Amorim, L, et al.
Publicado: (2010)

Lattice location of Mg in GaN: a fresh look at doping limitations
por: Wahl, Ulrich, et al.
Publicado: (2017)

Lattice location of transition metals and rare earths in semiconductors
por: Wahl, U, et al.
Publicado: (2003)

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN
por: Wahl, Ulrich, et al.
Publicado: (2021)

Lattice sites of ion implanted Cu atoms in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Microstructural Analysis of Novel Preceramic Paper-Derived SiC(f)/SiC Composites
por: Li, Ke, et al.
Publicado: (2021)

αSiC - βSiC - graphene composites
por: Razmjoo, Ali, et al.
Publicado: (2023)

$\alpha$-emission channeling investigations of the lattice location of Li in Ge
por: Wahl, U, et al.
Publicado: (1996)

Evolution of lattice distortions in 4H-SiC wafers with varying doping
por: Mahadik, Nadeemullah A., et al.
Publicado: (2020)

Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites
por: Li, Longbiao
Publicado: (2016)

SiC materials and devices
por: Willardson, R K, et al.
Publicado: (1998)

Damage formation and recovery in Fe implanted 6H–SiC
por: Miranda, Pedro, et al.
Publicado: (2011)

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
por: Schuh, Philipp, et al.
Publicado: (2019)

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
por: Silva, Daniel José, et al.
Publicado: (2013)

Comparative Study on Micro-Grinding Performance of 2.5D C(f)/SiCs, 2.5D SiC(f)/SiCs, and SiC Ceramics
por: Wen, Quan, et al.
Publicado: (2023)

Influence of Oxidation Damages on Mechanical Properties of SiC/SiC Composite Using Domestic Hi-Nicalon Type SiC Fibers
por: Jin, Enze, et al.
Publicado: (2020)

Interfacial properties of SiC(f)/SiC minicomposites with a scheelite coating
por: Ni, Na, et al.
Publicado: (2022)

Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS
por: Yang, Xin, et al.
Publicado: (2023)

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties
por: Roder, Melissa, et al.
Publicado: (2023)

Significant Improvement of Mechanical Properties of SiC-Nanowire-Reinforced SiC(f)/SiC Composites via Atomic Deposition of Ni Catalysts
por: Wu, Zongxu, et al.
Publicado: (2022)

Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays
por: Deng, Yu-Chen, et al.
Publicado: (2021)

Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor
por: Tian, Baohua, et al.
Publicado: (2021)

Performance of bulk SiC radiation detectors
por: Cunningham, W, et al.
Publicado: (2002)

Porous SiC and SiC/C(f) Ceramic Microspheres Derived from Polyhydromethylsiloxane by Carbothermal Reduction
por: Mizerska, Urszula, et al.
Publicado: (2021)

Diffusion mechanisms and lattice locations of thermal-equilibrium defects in Si-Ge alloys
por: Strohm, A, et al.
Publicado: (1999)

Nature of the Insulating Ground State of the Two-Dimensional Sn Atom Lattice on SiC(0001)
por: Yi, Seho, et al.
Publicado: (2016)

SiC/MoSi(2)-SiC-Si Oxidation Protective Coatings for HTR Graphite Spheres with Residual Si Optimized
por: Wei, Xiaoyu, et al.
Publicado: (2022)

Lattice location of transition metals in semiconductors
por: Correia, J G, et al.
Publicado: (1998)

Development of SiC/PVB Composite Powders for Selective Laser Sintering Additive Manufacturing of SiC
por: Zhou, Peng, et al.
Publicado: (2018)

Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth
por: Kawanishi, Sakiko, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_5iqus0mf3sva156snc290ah7pm