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Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
| Autor principal: | |
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| Lenguaje: | eng |
| Publicado: |
2019
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2680840 |
| _version_ | 1780962990341750784 |
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| author | Borghello, Giulio |
| author_facet | Borghello, Giulio |
| author_sort | Borghello, Giulio |
| collection | CERN |
| id | cern-2680840 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2019 |
| record_format | invenio |
| spelling | cern-26808402019-09-30T06:29:59Zhttp://cds.cern.ch/record/2680840engBorghello, GiulioIonizing radiation effects in nanoscale CMOS technologies exposed to ultra-high dosesEngineeringCERN-THESIS-2018-430oai:cds.cern.ch:26808402019-07-02T08:25:09Z |
| spellingShingle | Engineering Borghello, Giulio Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title | Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title_full | Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title_fullStr | Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title_full_unstemmed | Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title_short | Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses |
| title_sort | ionizing radiation effects in nanoscale cmos technologies exposed to ultra-high doses |
| topic | Engineering |
| url | http://cds.cern.ch/record/2680840 |
| work_keys_str_mv | AT borghellogiulio ionizingradiationeffectsinnanoscalecmostechnologiesexposedtoultrahighdoses |