A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charg...

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Detalles Bibliográficos
Autores principales: Iacobucci, Giuseppe, Cardarelli, R., Débieux, S., Di Bello, F.A., Favre, Y., Hayakawa, D., Kaynak, M., Nessi, M., Paolozzi, L., Rücker, H., Sultan, D.M.S., Valerio, P.
Lenguaje:eng
Publicado: 2019
Materias:
hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/14/11/P11008
http://cds.cern.ch/record/2689147

Internet

https://dx.doi.org/10.1088/1748-0221/14/11/P11008
http://cds.cern.ch/record/2689147

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