A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charg...

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Detalles Bibliográficos
Autores principales: Iacobucci, Giuseppe, Cardarelli, R., Débieux, S., Di Bello, F.A., Favre, Y., Hayakawa, D., Kaynak, M., Nessi, M., Paolozzi, L., Rücker, H., Sultan, D.M.S., Valerio, P.
Lenguaje:eng
Publicado: 2019
Materias:
hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/14/11/P11008
http://cds.cern.ch/record/2689147
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author Iacobucci, Giuseppe
Cardarelli, R.
Débieux, S.
Di Bello, F.A.
Favre, Y.
Hayakawa, D.
Kaynak, M.
Nessi, M.
Paolozzi, L.
Rücker, H.
Sultan, D.M.S.
Valerio, P.
author_facet Iacobucci, Giuseppe
Cardarelli, R.
Débieux, S.
Di Bello, F.A.
Favre, Y.
Hayakawa, D.
Kaynak, M.
Nessi, M.
Paolozzi, L.
Rücker, H.
Sultan, D.M.S.
Valerio, P.
author_sort Iacobucci, Giuseppe
collection CERN
description A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e− for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.
id cern-2689147
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling cern-26891472022-08-10T12:20:39Zdoi:10.1088/1748-0221/14/11/P11008http://cds.cern.ch/record/2689147engIacobucci, GiuseppeCardarelli, R.Débieux, S.Di Bello, F.A.Favre, Y.Hayakawa, D.Kaynak, M.Nessi, M.Paolozzi, L.Rücker, H.Sultan, D.M.S.Valerio, P.A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technologyhep-exParticle Physics - Experimentphysics.ins-detDetectors and Experimental TechniquesA monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e− for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.arXiv:1908.09709oai:cds.cern.ch:26891472019-08-26
spellingShingle hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
Iacobucci, Giuseppe
Cardarelli, R.
Débieux, S.
Di Bello, F.A.
Favre, Y.
Hayakawa, D.
Kaynak, M.
Nessi, M.
Paolozzi, L.
Rücker, H.
Sultan, D.M.S.
Valerio, P.
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title_full A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title_fullStr A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title_full_unstemmed A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title_short A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
title_sort 50 ps resolution monolithic active pixel sensor without internal gain in sige bicmos technology
topic hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/14/11/P11008
http://cds.cern.ch/record/2689147
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