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Ferroelectric-gate field effect transistor memories: device physics and applications

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

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Detalles Bibliográficos
Autores principales: Park, Byung-Eun, Ishiwara, Hiroshi, Okuyama, Masanori, Sakai, Shigeki, Yoon, Sung-Min
Lenguaje:eng
Publicado: Springer 2020
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-981-15-1212-4
http://cds.cern.ch/record/2717189