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DRAD results obtained during irradiation campaigns
The DRAD chip was designed with the aim of studying the impact of high radiation levels on digital electronics in 65nm CMOS technology, A description of the chip and a summary of the results obtained in the testing is shown in this document. Results cover campaigns after irradiation up to total ion...
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| Lenguaje: | eng |
| Publicado: |
2020
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| Acceso en línea: | http://cds.cern.ch/record/2725573 |
| Sumario: | The DRAD chip was designed with the aim of studying the impact of high radiation levels on digital electronics in 65nm CMOS technology, A description of the chip and a summary of the results obtained in the testing is shown in this document. Results cover campaigns after irradiation up to total ionizing doses of 200 Mrad and 500 Mrad at different temperatures. Next versions will cover future irradiation campaigns. |
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