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High spatial resolution monolithic pixel detector in SOI technology
This paper presents test-beam results of monolithic pixel detector prototypes fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology studied in the context of high spatial resolution performance. The tested detectors were fabricated on a 500 μm thick high-resistivity Floating Zone type n (F...
| Autores principales: | , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2020.164897 http://cds.cern.ch/record/2727594 |