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High spatial resolution monolithic pixel detector in SOI technology

This paper presents test-beam results of monolithic pixel detector prototypes fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology studied in the context of high spatial resolution performance. The tested detectors were fabricated on a 500 μm thick high-resistivity Floating Zone type n (F...

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Detalles Bibliográficos
Autores principales:	Bugiel, R, Bugiel, S, Dannheim, D, Fiergolski, A, Hynds, D, Idzik, M, Kapusta, P, Kucewicz, W, Munker, M, Nurnberg, A, Spannagel, S, Świentek, K
Lenguaje:	eng
Publicado:	2021
Materias:	Particle Physics - Experiment
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2020.164897 http://cds.cern.ch/record/2727594

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