Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)

Detalles Bibliográficos
Autores principales: Faccio, F, Bianchi, M, Fornasari, M, Heijne, Erik H M, Jarron, Pierre, Rossi, G, Borel, G, Redolfi, J
Lenguaje:eng
Publicado: 1994
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/276032

Internet

http://cds.cern.ch/record/276032

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