Cargando…
Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)
| Autores principales: | , , , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
1994
|
| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/276032 |
| _version_ | 1780887524496900096 |
|---|---|
| author | Faccio, F Bianchi, M Fornasari, M Heijne, Erik H M Jarron, Pierre Rossi, G Borel, G Redolfi, J |
| author_facet | Faccio, F Bianchi, M Fornasari, M Heijne, Erik H M Jarron, Pierre Rossi, G Borel, G Redolfi, J |
| author_sort | Faccio, F |
| collection | CERN |
| id | cern-276032 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1994 |
| record_format | invenio |
| spelling | cern-2760322019-09-30T06:29:59Zhttp://cds.cern.ch/record/276032engFaccio, FBianchi, MFornasari, MHeijne, Erik H MJarron, PierreRossi, GBorel, GRedolfi, JNoise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)Detectors and Experimental TechniquesCERN-ECP-94-22CERN-ECP-94-022oai:cds.cern.ch:2760321994-12-12 |
| spellingShingle | Detectors and Experimental Techniques Faccio, F Bianchi, M Fornasari, M Heijne, Erik H M Jarron, Pierre Rossi, G Borel, G Redolfi, J Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title | Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title_full | Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title_fullStr | Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title_full_unstemmed | Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title_short | Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI) |
| title_sort | noise characterization of transistors in a 1.2 $\mu$m cmos-soi technology up to a total dose of 12 mrad (si) |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/276032 |
| work_keys_str_mv | AT facciof noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT bianchim noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT fornasarim noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT heijneerikhm noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT jarronpierre noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT rossig noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT borelg noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi AT redolfij noisecharacterizationoftransistorsina12mumcmossoitechnologyuptoatotaldoseof12mradsi |