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Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs,...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2021.3062622 http://cds.cern.ch/record/2777060 |