Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors

MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs,...

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Detalles Bibliográficos
Autores principales: Borghello, Giulio, Faccio, Federico, Termo, Gennaro, Michelis, Stefano, Costanzo, Sebastiano, Koch, Henri D, Fleetwood, Daniel M
Lenguaje:eng
Publicado: 2021
Acceso en línea:https://dx.doi.org/10.1109/TNS.2021.3062622
http://cds.cern.ch/record/2777060

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