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Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS
This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital c...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2021.3072328 http://cds.cern.ch/record/2777065 |