Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS

This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital c...

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Detalles Bibliográficos
Autores principales: Wang, Jialei, Prinzie, Jeffrey, Coronetti, Andrea, Thys, S, García Alia, Rubén, Leroux, Paul
Lenguaje:eng
Publicado: 2021
Acceso en línea:https://dx.doi.org/10.1109/TNS.2021.3072328
http://cds.cern.ch/record/2777065

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