Cargando…
Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS
This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiatio...
Autores principales: | Biereigel, Stefan, Kulis, Szymon, Leroux, Paul, Moreira, Paulo, Kolpin, Alexander, Prinzie, Jeffrey |
---|---|
Lenguaje: | eng |
Publicado: |
2021
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/tns.2021.3121029 http://cds.cern.ch/record/2791557 |
Ejemplares similares
-
Radiation-Tolerant Digitally Controlled Ring Oscillator in 65-nm CMOS
por: Biereigel, Stefan, et al.
Publicado: (2022) -
Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS
por: Biereigel, Stefan, et al.
Publicado: (2021) -
A Low Noise Fault Tolerant Radiation Hardened 2.56 Gbps Clock-Data Recovery Circuit With High Speed Feed Forward Correction in 65 nm CMOS
por: Biereigel, Stefan, et al.
Publicado: (2019) -
A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology
por: Kulis, Szymon, et al.
Publicado: (2019) -
A Low Noise Fault Tolerant Radiation Hardened 2.56 Gbps Clock-Data Recovery Circuit with High Speed Feed Forward Correction in 65 nm CMOS
por: Prinzie, Jeffrey, et al.
Publicado: (2019)