Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environmen...

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Detalles Bibliográficos
Autores principales: Martinella, C, Natzke, P, Alia, R G, Kadi, Y, Niskanen, K, Rossi, M, Jaatinen, J, Kettunen, H, Tsibizov, A, Grossner, U, Javanainen, A
Lenguaje:eng
Publicado: 2022
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.microrel.2021.114423
http://cds.cern.ch/record/2791566

Internet

https://dx.doi.org/10.1016/j.microrel.2021.114423
http://cds.cern.ch/record/2791566

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