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Characterization of irradiated RD53A pixel modules with passive CMOS sensors
We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/17/09/C09004 http://cds.cern.ch/record/2799582 |