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Characterization of irradiated RD53A pixel modules with passive CMOS sensors

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon...

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Detalles Bibliográficos
Autores principales:	Jofrehei, A., Backhaus, M., Baertschi, P., Canelli, F., Glessgen, F., Jin, W., Kilminster, B., Macchiolo, A., Reimers, A., Ristic, B., Wallny, R.
Lenguaje:	eng
Publicado:	2021
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1088/1748-0221/17/09/C09004 http://cds.cern.ch/record/2799582

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