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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon
The influence of the injection of minority charge carriers on the formation of adivalent bistable defect (DBH) having two energy levels of $E_v + 0.44$ eV and $E_v + 0.53$ eV in its metastable configuration is investigated. Using forward cur-rent injection, the formation temperature of this defect...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/pssa.201900354 http://cds.cern.ch/record/2801670 |