Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

The influence of the injection of minority charge carriers on the formation of adivalent bistable defect (DBH) having two energy levels of $E_v + 0.44$ eV and $E_v + 0.53$ eV in its metastable configuration is investigated. Using forward cur-rent injection, the formation temperature of this defect in p-type silicon can belowered by about 50°C. The production of such bistable defect is enhanced inmaterials with a high ratio of boron to carbon concentrations. This allows one toconclude that the boron atom is one of the constituents of the defect under study.There is also a correlation between the behavior of the bistable hole traps and ametastable electron trap observed earlier. It is concluded that these traps arerelated to metastable and stable configurations of the DBH defect, which hasinverse occupancy level ordering in its stable configuration.