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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

The influence of the injection of minority charge carriers on the formation of adivalent bistable defect (DBH) having two energy levels of $E_v + 0.44$ eV and $E_v + 0.53$ eV in its metastable configuration is investigated. Using forward cur-rent injection, the formation temperature of this defect...

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Detalles Bibliográficos
Autores principales:	Makarenko, Leonid F, Lastovski, Stanislav B, Yakushevich, Hanna S, Gaubas, Eugenijus, Pavlov, Jevgenij, Kozlovski, Vitali V, Moll, Michael, Pintilie, Ioana
Lenguaje:	eng
Publicado:	2019
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1002/pssa.201900354 http://cds.cern.ch/record/2801670

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