A generalized EKV charge-based MOSFET model including oxide and interface traps

This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with resp...

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Detalles Bibliográficos
Autores principales: Zhang, Chun-Min, Jazaeri, Farzan, Borghello, Giulio, Mattiazzo, Serena, Baschirotto, Andrea, Enz, Christian
Lenguaje:eng
Publicado: 2021
Materias:
Detectors and Experimental Techniques
Nuclear Physics - Experiment
Acceso en línea:https://dx.doi.org/10.1016/j.sse.2020.107951
http://cds.cern.ch/record/2810013

Internet

https://dx.doi.org/10.1016/j.sse.2020.107951
http://cds.cern.ch/record/2810013

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