Cargando…
A generalized EKV charge-based MOSFET model including oxide and interface traps
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with resp...
| Autores principales: | , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2021
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.sse.2020.107951 http://cds.cern.ch/record/2810013 |