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Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks

Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and metal foil resistor networks are presented. The lowest levels...

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Autor principal: Beev, Nikolai
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1109/I2MTC48687.2022.9806690
http://cds.cern.ch/record/2814429
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author Beev, Nikolai
author_facet Beev, Nikolai
author_sort Beev, Nikolai
collection CERN
description Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and metal foil resistor networks are presented. The lowest levels were found in metal foil devices, followed by thin film NiCr networks deposited on silicon substrates. Higher excess noise with a significant spread between different types was seen in thin film devices deposited on ceramic substrates.
id cern-2814429
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2022
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spelling cern-28144292023-06-13T18:24:18Zdoi:10.1109/I2MTC48687.2022.9806690http://cds.cern.ch/record/2814429engBeev, NikolaiMeasurement of Excess Noise in Thin Film and Metal Foil Resistor NetworksAccelerators and Storage RingsLow-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and metal foil resistor networks are presented. The lowest levels were found in metal foil devices, followed by thin film NiCr networks deposited on silicon substrates. Higher excess noise with a significant spread between different types was seen in thin film devices deposited on ceramic substrates.Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and metal foil resistor networks are presented. The lowest levels were found in metal foil devices, followed by thin film NiCr networks deposited on silicon substrates. Higher excess noise with a significant spread between different types was seen in thin film devices deposited on ceramic substrates.Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and metal foil resistor networks are presented. The lowest levels were found in metal foil devices, followed by thin film NiCr networks deposited on silicon substrates. Higher excess noise with a significant spread between different types was seen in thin film devices deposited on ceramic substrates.arXiv:2109.02448CERN-ACC-2022-0010oai:cds.cern.ch:28144292022-06-30
spellingShingle Accelerators and Storage Rings
Beev, Nikolai
Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title_full Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title_fullStr Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title_full_unstemmed Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title_short Measurement of Excess Noise in Thin Film and Metal Foil Resistor Networks
title_sort measurement of excess noise in thin film and metal foil resistor networks
topic Accelerators and Storage Rings
url https://dx.doi.org/10.1109/I2MTC48687.2022.9806690
http://cds.cern.ch/record/2814429
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