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Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors

The powering configuration of the silicon strip modules developed for the new Inner Tracker of the ATLAS experiment includes a voltage of up to 0.5 V across the coupling capacitor of each individual strip. However, this voltage is usually not applied in the sensor irradiation studies due to the sign...

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Detalles Bibliográficos
Autores principales: Kroll, Jiri, Allport, Philip Patrick, Chisholm, Andrew Stephen, Fadeyev, Vitaliy, George, William Frederick, Gonella, Laura, Kopsalis, Ioannis, Kvasnicka, Jiri, Latonova, Vera, Lomas, Joshua David, Mikestikova, Marcela, Shi, Xin, Tuma, Pavel, Ullan, Miguel, Unno, Yoshinobu, Martinez-Mc Kinney, Forest
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:http://cds.cern.ch/record/2814933