First observation of the charge carrier density related gain reduction mechanism in LGADs with the Two Photon Absorption-Transient Current Technique

The Low Gain Avalanche Detector (LGAD) technology is very promising for silicon timing detectors and currently heavily researched. Recent studies show that the gain of LGADs highly depends on the charge carrier density inside the gain layer. To study the charge carrier density related gain reduction...

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Detalles Bibliográficos
Autores principales: Pape, S, Currás, E, Fernández García, M, Moll, M, Montero, R, Palomo, F R, Vila, I, Wiehe, M, Quintana, C
Lenguaje:eng
Publicado: 2022
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2022.167190
http://cds.cern.ch/record/2823955

Internet

https://dx.doi.org/10.1016/j.nima.2022.167190
http://cds.cern.ch/record/2823955

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