Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may...

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Detalles Bibliográficos
Autores principales: Røed, Ketil, Eriksen, Dag Øistein, Ceccaroli, Bruno, Martinella, Corinna, Javanainen, Arto, Reshanov, Sergey, Massetti, Silvia
Lenguaje:eng
Publicado: 2022
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2022.3173061
http://cds.cern.ch/record/2824344

Internet

https://dx.doi.org/10.1109/TNS.2022.3173061
http://cds.cern.ch/record/2824344

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