Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may...

Descripción completa

Detalles Bibliográficos
Autores principales: Røed, Ketil, Eriksen, Dag Øistein, Ceccaroli, Bruno, Martinella, Corinna, Javanainen, Arto, Reshanov, Sergey, Massetti, Silvia
Lenguaje:eng
Publicado: 2022
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2022.3173061
http://cds.cern.ch/record/2824344
_version_ 1780973691601944576
author Røed, Ketil
Eriksen, Dag Øistein
Ceccaroli, Bruno
Martinella, Corinna
Javanainen, Arto
Reshanov, Sergey
Massetti, Silvia
author_facet Røed, Ketil
Eriksen, Dag Øistein
Ceccaroli, Bruno
Martinella, Corinna
Javanainen, Arto
Reshanov, Sergey
Massetti, Silvia
author_sort Røed, Ketil
collection CERN
description The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
id cern-2824344
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2022
record_format invenio
spelling cern-28243442022-08-11T18:17:03Zdoi:10.1109/TNS.2022.3173061http://cds.cern.ch/record/2824344engRøed, KetilEriksen, Dag ØisteinCeccaroli, BrunoMartinella, CorinnaJavanainen, ArtoReshanov, SergeyMassetti, SilviaIsotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion IrradiationDetectors and Experimental TechniquesThe radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.oai:cds.cern.ch:28243442022
spellingShingle Detectors and Experimental Techniques
Røed, Ketil
Eriksen, Dag Øistein
Ceccaroli, Bruno
Martinella, Corinna
Javanainen, Arto
Reshanov, Sergey
Massetti, Silvia
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title_full Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title_fullStr Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title_full_unstemmed Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title_short Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
title_sort isotopic enriched and natural sic junction barrier schottky diodes under heavy ion irradiation
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2022.3173061
http://cds.cern.ch/record/2824344
work_keys_str_mv AT røedketil isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT eriksendagøistein isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT ceccarolibruno isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT martinellacorinna isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT javanainenarto isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT reshanovsergey isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation
AT massettisilvia isotopicenrichedandnaturalsicjunctionbarrierschottkydiodesunderheavyionirradiation

Ejemplares similares