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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2022.3173061 http://cds.cern.ch/record/2824344 |