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Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system
A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated und...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/17/08/C08011 http://cds.cern.ch/record/2825285 |