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Contactless doping characterization of ${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ using acceptor Cd probes

Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ could strongly influence and contribute to the development of the next generation of power electronics. In this work, we comb...

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Detalles Bibliográficos
Autores principales: Barbosa, Marcelo B, Correia, João Guilherme, Lorenz, Katharina, Lopes, Armandina M L, Oliveira, Gonçalo N P, Fenta, Abel S, Schell, Juliana, Teixeira, Ricardo, Nogales, Emilio, Méndez, Bianchi, Stroppa, Alessandro, Araújo, João Pedro
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1038/s41598-022-18121-y
http://cds.cern.ch/record/2835477