Cargando…
Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration
The CERN RD50 CMOS working group is designing and characterizing depleted monolithic active pixel sensors (DMAPS) for use in high radiation environments fabricated in the LFoundry 150 nm HV-CMOS process. The first iteration of this chip, RD50-MPW1, suffered from high leakage current, low breakdown v...
| Autores principales: | , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2022
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2022.167020 http://cds.cern.ch/record/2835873 |