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Proton irradiation of GaN transistor based power supply operating in the linear region
This paper describes the board level testing of a linear power supply based on SiC Junction Barrier Schottky diodes and GaN Hybrid Drain embedded Gate Injection Tran-sistors in a 186 MeV proton beam to evaluate the potential sensitivity to SEEs. The GaN components of the power supply have been indiv...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2020
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| Acceso en línea: | https://dx.doi.org/10.1109/RADECS50773.2020.9857693 http://cds.cern.ch/record/2836353 |