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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
Using the Y–function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/cicta.2018.8705713 http://cds.cern.ch/record/2838137 |