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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Using the Y–function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

Detalles Bibliográficos
Autores principales:	Zhang, C -M, Jazaeri, F, Borghello, G, Mattiazzo, S, Baschirotto, A, Enz, C
Lenguaje:	eng
Publicado:	2018
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/cicta.2018.8705713 http://cds.cern.ch/record/2838137

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