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Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver
This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO$_2$). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/redw51883.2020.9325832 http://cds.cern.ch/record/2839255 |