Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver

This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO$_2$). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO$_2$) which results into a non-functional operation of the DUT. Additional TID testing to 80 Mrad(SiO$_2$) has been performed to investigate further behavior. Rebound effects during 100°C tempered post-test annealing to almost nominal operations are observed.