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Study of impact ionization coefficients in silicon with Low Gain Avalanche Diodes
Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on low-gain avalanche diodes (LGADs) and derive new parameterizations for t...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TED.2023.3267058 http://cds.cern.ch/record/2844966 |