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Study of impact ionization coefficients in silicon with Low Gain Avalanche Diodes

Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on low-gain avalanche diodes (LGADs) and derive new parameterizations for t...

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Detalles Bibliográficos
Autores principales: Curras Rivera, Esteban, Moll, Michael
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TED.2023.3267058
http://cds.cern.ch/record/2844966

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