Heavy-Ion Charge Yield Measurement by Floating Gate Dosimeters

An alternative technique for measuring the charge yield is explored in this paper. The charge yield is determined by measuring the fraction of electrons that survive the initial recombination. To this purpose, a silicon dosimeter based on a floating gate structure has been employed. Since the dosime...

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Detalles Bibliográficos
Autores principales: Brucoli, Matteo, Danzeca, Salvatore, Waage, Aleksander, Masi, Alessandro, Alia, Rubén Garcia, Mas, Bartomeu Severa, Pineda, Alvaro, Ferlet-Cavrois, Veronique
Lenguaje:eng
Publicado: 2021
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/RADECS53308.2021.9954559
http://cds.cern.ch/record/2846296

Internet

https://dx.doi.org/10.1109/RADECS53308.2021.9954559
http://cds.cern.ch/record/2846296

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