Heavy-Ion Charge Yield Measurement by Floating Gate Dosimeters

An alternative technique for measuring the charge yield is explored in this paper. The charge yield is determined by measuring the fraction of electrons that survive the initial recombination. To this purpose, a silicon dosimeter based on a floating gate structure has been employed. Since the dosimeter’s active volume consists of field oxide (FOX) layers and works at low electric fields (< 0.1 MeV/cm), this technique allows investigating the charge collection under conditions similar to the those found in insolation oxides, which are the main reason for TID-induced degradation in scaled technologies.Finally, charge yield is measured independently from the hole trapping efficiency of the sensor’s SiO 2 .In this study, the floating gate dosimeter has been exposed to heavy ion beams with LETs ranging from 0.24 to 44 MeV∙cm 2 ∙mg 1 . Its radiation response has been analyzed and the charge yield has been determined for the three ions.