Cargando…
Heavy-Ion Charge Yield Measurement by Floating Gate Dosimeters
An alternative technique for measuring the charge yield is explored in this paper. The charge yield is determined by measuring the fraction of electrons that survive the initial recombination. To this purpose, a silicon dosimeter based on a floating gate structure has been employed. Since the dosime...
| Autores principales: | , , , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2021
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/RADECS53308.2021.9954559 http://cds.cern.ch/record/2846296 |