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Overview of CNM LGAD results: boron Si-on-Si and epitaxial wafers
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. The moderate gain...
Autores principales: | , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2022
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/17/09/C09021 http://cds.cern.ch/record/2847479 |