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Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors

Detalles Bibliográficos
Autores principales: Matsushita, T, Fukunaga, C, Ikeda, H, Saitô, Y
Lenguaje:eng
Publicado: 1995
Materias:
Acceso en línea:http://cds.cern.ch/record/285381
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author Matsushita, T
Fukunaga, C
Ikeda, H
Saitô, Y
author_facet Matsushita, T
Fukunaga, C
Ikeda, H
Saitô, Y
author_sort Matsushita, T
collection CERN
id cern-285381
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1995
record_format invenio
spelling cern-2853812019-09-30T06:29:59Zhttp://cds.cern.ch/record/285381engMatsushita, TFukunaga, CIkeda, HSaitô, YTotal-dose effects of $\gamma$-ray irradiation on SOI-MOS transistorsDetectors and Experimental TechniquesKEK-94-195TMU-94-51oai:cds.cern.ch:2853811995
spellingShingle Detectors and Experimental Techniques
Matsushita, T
Fukunaga, C
Ikeda, H
Saitô, Y
Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title_full Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title_fullStr Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title_full_unstemmed Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title_short Total-dose effects of $\gamma$-ray irradiation on SOI-MOS transistors
title_sort total-dose effects of $\gamma$-ray irradiation on soi-mos transistors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/285381
work_keys_str_mv AT matsushitat totaldoseeffectsofgammarayirradiationonsoimostransistors
AT fukunagac totaldoseeffectsofgammarayirradiationonsoimostransistors
AT ikedah totaldoseeffectsofgammarayirradiationonsoimostransistors
AT saitoy totaldoseeffectsofgammarayirradiationonsoimostransistors